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| PD-90010 IRF7809AV * * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7809AV RDS(on) QG Qsw Qoss 7.0m 41nC 14nC 30nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TL = 90C IDM PD Symbol VDS VGS ID IRF7809A V 30 12 13.3 14.6 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V 10/26/00 IRF7809AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - - (off) Min 30 Typ - 7.0 Max - 9.0 Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 12V VGS=5V, ID=15A, VDS=20V VGS = 5V, VDS< 100mV VDS = 20V, ID = 15A Current* A nA Gate-Source Leakage Current* Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance 100 41 36 7.0 2.3 12 14 30 1.5 14 36 96 10 3780 1060 130 - - - 21 45 62 54 nC ID=15A, VDS=16V VDS = 16V, VGS = 0 VDD = 16V, ID = 15A ns VGS = 5V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) 120 Min Typ Max 1.3 Units V nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A 150 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Typical values measured at VGS = 4.5V, IF = 15A. 2 www.irf.com IRF7809AV 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 2.5V 20s PULSE WIDTH TJ = 150 C 1 10 100 2.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 ID = 15A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1.5 100 1.0 TJ = 150 C TJ = 25 C V DS = 15V 20s PULSE WIDTH 2.6 2.8 3.0 3.2 3.4 0.5 10 2.4 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7809AV 6000 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 15A VDS = 20V 8 C, Capacitance (pF) 4000 Ciss 3000 6 4 2000 Coss 1000 2 0 1 Crss 10 100 0 0 10 20 30 40 50 60 70 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C I D , Drain Current (A) 100 100 10us 10 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7809AV 16 VDS VGS RD D.U.T. + I D , Drain Current (A) 12 RG - VDD 10V 8 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 0.01 0.00001 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7809AV R DS (on) , Drain-to-Source On Resistance ( ) R DS(on) , Drain-to -Source On Resistance ( ) 0.008 0.012 VGS = 4.5V 0.007 0.010 0.006 ID = 15A 0.008 VGS = 10V 0.005 0 20 40 60 80 100 120 ID , Drain Current (A) 0.006 2.5 3.0 3.5 4.0 4.5 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 500 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA TOP 400 Charge IG ID BOTTOM ID 6.7A 9.5A 15A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V (B R )D S S tp VD S L DRIVER 100 RG 20 V IAS tp D.U .T IA S 0.0 1 + V - DD 0 25 50 75 100 125 150 A Starting TJ , Junction Temperature ( C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7809AV SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 7 IRF7809AV SO-8 Tape and Reel T E R M IN A L N UM B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 30 .00 ( 12 .9 9 2 ) M A X. 1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN G DIM E N S IO N : M IL L IME T E R . 2 . O UT L IN E C O N F O R M S T O E IA -4 8 1 & E IA -54 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com |
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